Electrical plasmon injection in double-layer graphene heterostructures

Electrical Double Layer

Bipolar doping of double-layer graphene vertical heterostructures with hydrogenated boron nitride.

Using first-principles calculations, we examined the bipolar doping of double-layer graphene vertical heterostructures, which are constructed by hydrogenated boron nitride (BN) sheets sandwiched into two parallel graphene monolayers. The built-in potential difference in hydrogenated BN breaks the interlayer symmetry, resulting in the p- and n-type doping of two graphene layers at 0.83 and -0.8 ...

Extremely large magnetoresistance in few-layer graphene/boron–nitride heterostructures

Understanding magnetoresistance, the change in electrical resistance under an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here we report an extremely large local magnetor...

Double-layer graphene optical modulator.

Here we report a high-performance double-layer graphene optical modulator. By using two graphene layers and an oxide layer in between to form a p-oxide-n like junction, this modulator operates at 1 GHz with a high modulation depth (~0.16 dB/μm) at a moderate drive voltage (~5 V). Benefited from the symmetrical band structure of graphene near Dirac point, such design eliminates the optical loss ...

Gate-tunable resonant tunneling in double bilayer graphene heterostructures.

We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potenti...